diff options
Diffstat (limited to 'src/lib/netlist/analog/nld_mosfet.cpp')
-rw-r--r-- | src/lib/netlist/analog/nld_mosfet.cpp | 488 |
1 files changed, 0 insertions, 488 deletions
diff --git a/src/lib/netlist/analog/nld_mosfet.cpp b/src/lib/netlist/analog/nld_mosfet.cpp deleted file mode 100644 index ea717fdefee..00000000000 --- a/src/lib/netlist/analog/nld_mosfet.cpp +++ /dev/null @@ -1,488 +0,0 @@ -// license:GPL-2.0+ -// copyright-holders:Couriersud -/* - * nld_mosfet.cpp - * - * Formulas in here based on the following Sources: - * - * https://www.imperial.ac.uk/pls/portallive/docs/1/7292573.PDF - * http://www3.imperial.ac.uk/pls/portallive/docs/1/56133736.PDF - * https://people.rit.edu/lffeee/SPICE_MOSFET_Model_Intro.pdf - * https://people.rit.edu/lffeee/SPICE.pdf - * http://web.mit.edu/course/6/6.012/SPR98/www/lectures/S98_Lecture10.pdf - * http://homepages.rpi.edu/~sawyes/Models_review.pdf - * http://jaco.ec.t.kanazawa-u.ac.jp/edu/mix/pdf/3.pdf - * - * Farid N. Naim, Circuit Simulation (Wiley-IEEE Press, 2010). - * Stefan Jahn, Michael Margraf, Vincent Habchi and Raimund Jacob, "Qucs Technical Papers" (2007) - * - */ - -#include "netlist/solver/nld_solver.h" -#include "netlist/nl_setup.h" -#include "nlid_twoterm.h" - -#include <cmath> - -#define BODY_CONNECTED_TO_SOURCE (1) - -namespace netlist -{ -namespace analog -{ - - using constants = plib::constants<nl_double>; - - // ----------------------------------------------------------------------------- - // nld_FET - Base classes - // ----------------------------------------------------------------------------- - - /*! Class representing the nmos model paramers. - * - * This is the model representation of the nmos model. Typically, SPICE uses - * the following parameters. A "Y" in the first column indicates that the - * parameter is actually used in netlist. - * - * | NL? |Name | Description|Units |Default |Example | - * |:---:|------|-----------------------------------------------------------------------|-------|---------:|----------------:| - * | Y |Vto | Zero-bias threshold voltage | V | 0 | 1 | - * | Y |Kp | Transconductance parameter | A/V² | 0.00002 | 0.00003 | - * | Y |Gamma | Bulk threshold parameter | V^½ | 0 | 0.37 | - * | Y |Phi | Surface inversion potential | V | 0.6 | 0.65 | - * | Y |Lambda| Channel-length modulation (level 1 and 2 only) | 1/V | 0 | 0.02 | - * | |Rd | Drain ohmic resistance |W|0|1| - * | |Rs | Source ohmic resistance |W|0|1| - * | |Cbd | Zero-bias B-D junction capacitance |F|0|20f| - * | |Cbs | Zero-bias B-S junction capacitance |F|0|20f| - * | Y |Is | Bulk junction saturation current |A|0.00000000000001|1E-015| - * | Y |N | Bulk diode emission coefficient |-|1|* - * | |Pb | Bulk junction potential |V|0.8|0.87|8| - * | |Cgso | Gate-source overlap capacitance per meter channel width |F/m|0|0.00000000004| - * | |Cgdo | Gate-drain overlap capacitance per meter channel width |F/m|0|0.00000000004|* - * | |Cgbo | Gate-bulk overlap capacitance per meter channel width |F/m|0|0.0000000002|* - * | |Rsh | Drain and source diffusion sheet resistance |W|0|10|* - * | |Cj | Zero-bias bulk junction bottom capacitance per square meter of junction area|F/m²|0|0.0002|* - * | |Mj | Bulk junction bottom grading coefficient |-|0.5|0.5|* - * | |Cjsw | Zero-bias bulk junction sidewall capacitance per meter of junction perimeter|F/m|0|1p|* - * | |Mjsw | Bulk junction sidewall grading coefficient |-|.50 level 1 .33 level 2,3|| - * | |Js | Bulk junction saturation current per square-meter of junction area|A/m|0|0.00000001| - * | Y |Tox | Oxide thickness |m|0.0000001|0.0000001| - * | Y |Nsub | Substrate doping |1/cm³|0|4000000000000000| - * | |Nss | Surface state density |1/cm²|0|10000000000| - * | |Nfs | Fast surface state |1/cm²|0|10000000000|* - * | |TPG | Type of gate material: +1 opp. to substrate -1 same as substrate 0 Al gate|-|1| - * | |Xj | Metallurgical junction depth |m|0|1µ|* - * | Y |Ld | Lateral diffusion |m|0|0.8µ| - * | Y |Uo | Surface mobility |cm²/V/s|600|700| - * | |Ucrit | Critical field for mobility degradation (level 2 only) |V/cm|10000|10000| - * | |Uexp | Critical field exponent in mobility degradation (level 2 only) |-|0|0.1| - * | |Utra | Transverse field coefficient (level 2 only) |-|0|0.3|* - * | |Vmax | Maximum carrier drift velocity (levels 2 & 3 only) |m/s|0|50000| - * | |Neff | Total channel-charge exponent (level 2 only) |-|1|5| - * | |Kf | Flicker noise coefficient |-|0|1E-026| - * | |Af | Flicker noise exponent |-|1|1.2| - * | |Fc | Coefficient for forward-bias depletion capacitance formula |-|0.5| - * | |Delta | Width effect on threshold voltage(levels 2 and 3) |-|0|1| - * | |Theta | Mobility modulation (level 3 only) |-|0|0.1| - * | |Eta | Static feedback (level 3 only) |-|0|1| - * | |Kappa | Saturation field (level 3 only) |0.2|0.5| - * | |Tnom | Parameter measurement temperature |ºC|27|50|| - * | Y |L | Length scaling |-|1.0|| - * | Y |W | Width scaling |-|1.0|| - * */ - - class fet_model_t : public param_model_t - { - public: - fet_model_t(device_t &device, const pstring &name, const pstring &val) - : param_model_t(device, name, val) - , m_VTO(*this, "VTO") - , m_N(*this, "N") - , m_ISS(*this, "IS") // Haven't seen a model using ISS / ISD - , m_ISD(*this, "IS") - , m_LD(*this, "LD") - , m_L(*this, "L") - , m_W(*this, "W") - , m_TOX(*this, "TOX") - , m_KP(*this, "KP") - , m_UO(*this, "UO") - , m_PHI(*this, "PHI") - , m_NSUB(*this, "NSUB") - , m_GAMMA(*this, "GAMMA") - , m_LAMBDA(*this, "LAMBDA") - , m_RD(*this, "RD") - , m_RS(*this, "RS") - {} - - value_t m_VTO; //!< Threshold voltage [V] - value_t m_N; //!< Bulk diode emission coefficient - value_t m_ISS; //!< Body diode saturation current - value_t m_ISD; //!< Body diode saturation current - value_t m_LD; //!< Lateral diffusion [m] - value_t m_L; //!< Length scaling - value_t m_W; //!< Width scaling - value_t m_TOX; //!< Oxide thickness - value_t m_KP; //!< Transconductance parameter [A/V²] - value_t m_UO; //!< Surface mobility [cm²/V/s] - value_t m_PHI; //!< Surface inversion potential [V] - value_t m_NSUB;//!< Substrate doping [1/cm³] - value_t m_GAMMA; //!< Bulk threshold parameter [V^½] - value_t m_LAMBDA; //!< Channel-length modulation [1/V] - value_t m_RD; //!< Drain ohmic resistance - value_t m_RS; //!< Source ohmic resistance - }; - - // Have a common start for mosfets - - NETLIB_OBJECT(FET) - { - public: - enum q_type { - FET_NMOS, - FET_PMOS - }; - - NETLIB_CONSTRUCTOR(FET) - , m_model(*this, "MODEL", "NMOS") - , m_qtype(FET_NMOS) - { - } - - NETLIB_IS_DYNAMIC(true) - - //NETLIB_RESETI(); - NETLIB_UPDATEI() { } - - q_type qtype() const { return m_qtype; } - bool is_qtype(q_type atype) const { return m_qtype == atype; } - void set_qtype(q_type atype) { m_qtype = atype; } - protected: - - fet_model_t m_model; - private: - q_type m_qtype; - }; - - // ----------------------------------------------------------------------------- - // nld_QBJT_EB - // ----------------------------------------------------------------------------- - - - NETLIB_OBJECT_DERIVED(MOSFET, FET) - { - public: - NETLIB_CONSTRUCTOR_DERIVED(MOSFET, FET) - , m_DG(*this, "m_DG", true) - , m_SG(*this, "m_SG", true) - , m_SD(*this, "m_SD", true) - , m_D_BD(*this, "m_D_BD") -#if (!BODY_CONNECTED_TO_SOURCE) - , m_D_BS(*this, "m_D_BS") -#endif - , m_phi(0.0) - , m_gamma(0.0) - , m_vto(0.0) - , m_beta(0.0) - , m_lambda(0.0) - , m_Leff(0.0) - , m_Cox(0.0) - { - register_subalias("S", m_SG.m_P); // Source - register_subalias("G", m_SG.m_N); // Gate - - register_subalias("D", m_DG.m_P); // Drain - - connect(m_SG.m_P, m_SD.m_P); - connect(m_SG.m_N, m_DG.m_N); - connect(m_DG.m_P, m_SD.m_N); - -#if 0 - if (m_model.m_CJE > 0.0) - { - create_and_register_subdevice("m_CJE", m_CJE); - connect("B", "m_CJE.1"); - connect("E", "m_CJE.2"); - } - if (m_model.m_CJC > 0.0) - { - create_and_register_subdevice("m_CJC", m_CJC); - connect("B", "m_CJC.1"); - connect("C", "m_CJC.2"); - } -#endif - } - - protected: - - NETLIB_RESETI(); - NETLIB_UPDATEI(); - NETLIB_UPDATE_PARAMI(); - NETLIB_UPDATE_TERMINALSI(); - - private: - - nld_twoterm m_DG; - nld_twoterm m_SG; - nld_twoterm m_SD; - - generic_diode<diode_e::MOS> m_D_BD; -#if (!BODY_CONNECTED_TO_SOURCE) - generic_diode<diode_e::MOS> m_D_BS; -#endif - - nl_double m_phi; - nl_double m_gamma; - nl_double m_vto; - nl_double m_beta; - nl_double m_lambda; - - /* used in capacitance calculation */ - nl_double m_Leff; - nl_double m_Cox; - - //NETLIB_SUBXX(analog, C) m_CJE; - //NETLIB_SUBXX(analog, C) m_CJC; - }; - - - - // ---------------------------------------------------------------------------------------- - // nld_Q - Ebers Moll - // ---------------------------------------------------------------------------------------- - - - NETLIB_UPDATE(MOSFET) - { - if (!m_SG.m_P.net().isRailNet()) - m_SG.m_P.solve_now(); // Basis - else if (!m_SG.m_N.net().isRailNet()) - m_SG.m_N.solve_now(); // Emitter - else - m_DG.m_N.solve_now(); // Collector - } - - NETLIB_RESET(MOSFET) - { - NETLIB_NAME(FET)::reset(); -#if 0 - if (m_CJE) - { - m_CJE->reset(); - m_CJE->m_C.setTo(m_model.m_CJE); - } - if (m_CJC) - { - m_CJC->reset(); - m_CJC->m_C.setTo(m_model.m_CJC); - } -#endif - } - - NETLIB_UPDATE_TERMINALS(MOSFET) - { - const nl_double polarity = (qtype() == FET_NMOS ? 1.0 : -1.0); - - const nl_double Ugd = -m_DG.deltaV() * polarity; // Gate - Drain - const nl_double Ugs = -m_SG.deltaV() * polarity; // Gate - Source - const nl_double Ubs = 0.0; // Bulk - Source == 0 if connected - const nl_double Ubd = m_SD.deltaV() * polarity; // Bulk - Drain = Source - Drain - const nl_double Uds = Ugs - Ugd; - -#if (!BODY_CONNECTED_TO_SOURCE) - m_D_BS.update_diode(Ubs); -#endif - m_D_BD.update_diode(Ubd); - - // Are we in forward mode ? - const bool is_forward = Uds >= 0; - - // calculate Vth - const nl_double Vbulk = is_forward ? Ubs : Ubd; - const nl_double phi_m_Vbulk = (m_phi > Vbulk) ? std::sqrt(m_phi - Vbulk) : 0.0; - const nl_double Vth = m_vto * polarity + m_gamma * (phi_m_Vbulk - std::sqrt(m_phi)); - - const nl_double Vctrl = (is_forward ? Ugs : Ugd) - Vth; - - nl_double Ids, gm, gds, gmb; - - if (Vctrl <= 0.0) - { - // cutoff region - Ids = 0.0; - gm = 0.0; - gds = 0.0; - gmb = 0.0; - } - else - { - const nl_double Vds = std::abs(Uds); - const nl_double b = m_beta * (1.0 + m_lambda * Vds); - if (Vctrl <= Vds) - { - // saturation region - Ids = b * Vctrl * Vctrl / 2.0; - gm = b * Vctrl; - gds = m_lambda * m_beta * Vctrl * Vctrl / 2.0; - } - else - { - // linear region - Ids = b * Vds * (Vctrl - Vds / 2); - gm = b * Vds; - gds = b * (Vctrl - Vds) + m_lambda * m_beta * Vds * (Vctrl - Vds / 2.0); - } - - // backgate transconductance - const nl_double bgtc = (phi_m_Vbulk != 0.0) ? (m_gamma / phi_m_Vbulk / 2.0) : 0.0; - gmb = gm * bgtc; - } - - // FIXME: these are needed to compute capacitance - // nl_double Udsat = pol * std::max (Utst, 0.0); - // Uon = pol * Vth; - - // compute bulk diode equivalent currents - - const nl_double IeqBD = m_D_BD.Ieq(); - const nl_double gbd = m_D_BD.G(); -#if 0 - const nl_double IeqBS = m_D_BS.Ieq(); - const nl_double gbs = m_D_BS.G(); -#else - const nl_double IeqBS = 0.0; - const nl_double gbs = 0.0; -#endif - // exchange controlling nodes if necessary - const nl_double gsource = is_forward ? (gm + gmb) : 0; - const nl_double gdrain = is_forward ? 0.0 : (gm + gmb); - - const nl_double IeqDS = (is_forward) ? - Ids - gm * Ugs - gmb * Ubs - gds * Uds - : -Ids - gm * Ugd - gmb * Ubd - gds * Uds; - - // IG = 0 - const nl_double IG = 0.0; - const nl_double ID = (+IeqBD - IeqDS) * polarity; - const nl_double IS = (+IeqBS + IeqDS) * polarity; - const nl_double IB = (-IeqBD - IeqBS) * polarity; - - const nl_double gGG = 0.0; // ok - const nl_double gGD = 0.0; // ok - const nl_double gGS = 0.0; // ok - const nl_double gGB = 0.0; // ok - - const nl_double gDG = gm; // ok - const nl_double gDD = gds + gbd - gdrain; // ok - const nl_double gDS = -gds - gsource; // ok - const nl_double gDB = gmb - gbd; // ok - - const nl_double gSG = -gm; // ok - const nl_double gSD = -gds + gdrain; // ok - const nl_double gSS = gbs + gds + gsource; // ok - const nl_double gSB = -gbs - gmb; - - const nl_double gBG = 0.0; // ok - const nl_double gBD = -gbd; // ok - const nl_double gBS = -gbs; - const nl_double gBB = gbs + gbd; // ok - - // Source connected to body, Diode S-B shorted! - const nl_double gSSBB = gSS + gBB + gBS + gSB; - - // S G - m_SG.set_mat( gSSBB, gSG + gBG, +(IS + IB), // S - gGS + gGB, gGG, IG ); // G - // D G - m_DG.set_mat( gDD, gDG, +ID, // D - gGD, 0.0, 0.0 ); // G - // S D - m_SD.set_mat( 0.0, gSD + gBD, 0.0, // S - gDS + gDB, 0.0, 0.0); // D - - } - - - NETLIB_UPDATE_PARAM(MOSFET) - { - set_qtype((m_model.model_type() == "NMOS") ? FET_NMOS : FET_PMOS); - - /* - * From http://ltwiki.org/LTspiceHelp/LTspiceHelp/M_MOSFET.htm : - * - * VTO, KP, LAMBDA, PHI and GAMMA. These parameters are computed - * if the process parameters(NSUB, TOX,...) are given, but - * user-specified values always override. - * - * But couldn't find a formula for lambda anywhere - * - */ - - m_lambda = m_model.m_LAMBDA; // FIXME: m_lambda only set once - - // calculate effective channel length - m_Leff = m_model.m_L - 2 * m_model.m_LD; - nl_assert_always(m_Leff > 0.0, "Effective Lateral diffusion would be negative for model " + m_model.name()); - if (m_model.m_TOX > 0.0) - m_Cox = (constants::eps_SiO2() * constants::eps_0() / m_model.m_TOX); - else - m_Cox = 0.0; - - // calculate DC transconductance coefficient - if (m_model.m_KP > 0) - m_beta = m_model.m_KP * m_model.m_W / m_Leff; - else if (m_Cox > 0 && m_model.m_UO > 0) - m_beta = m_model.m_UO * 1e-4 * m_Cox * m_model.m_W / m_Leff; - else - m_beta = 2e-5 * m_model.m_W / m_Leff; - - // Bulk diodes - - m_D_BD.set_param(m_model.m_ISD, m_model.m_N, exec().gmin(), constants::T0()); -#if (!BODY_CONNECTED_TO_SOURCE) - m_D_BS.set_param(m_model.m_ISS, m_model.m_N, exec().gmin(), constants::T0()); -#endif - - //FIXME::UT can disappear - const double Vt = constants::T0() * constants::k_b() / constants::Q_e(); - - // calculate surface potential if not given - - if (m_model.m_PHI > 0.0) - m_phi = m_model.m_PHI; - else if (m_model.m_NSUB > 0.0) - { - nl_assert_always(m_model.m_NSUB * 1e6 >= constants::NiSi(), "Error calculating phi for model " + m_model.name()); - m_phi = 2 * Vt * std::log (m_model.m_NSUB * 1e6 / constants::NiSi()); - } - else - m_phi = 0.6; - - // calculate bulk threshold if not given - if (m_model.m_GAMMA > 0.0) - m_gamma = m_model.m_GAMMA; - else - { - if (m_Cox > 0 && m_model.m_NSUB > 0) - m_gamma = std::sqrt (2.0 * constants::Q_e() * constants::eps_Si() * constants::eps_0() * m_model.m_NSUB * 1e6) / m_Cox; - else - m_gamma = 0.0; - } - - m_vto = m_model.m_VTO; - nl_assert_always(m_vto != 0.0, "Threshold voltage not specified for " + m_model.name()); - - /* FIXME: VTO if missing may be calculated from TPG, NSS and temperature. Usually models - * specify VTO so skip this here. - */ - - m_Cox = m_Cox * m_model.m_W * m_Leff; - - } - -} // namespace analog - -namespace devices { - NETLIB_DEVICE_IMPL_NS(analog, MOSFET, "MOSFET", "MODEL") -} // namespace devices - -} // namespace netlist |