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diff --git a/src/lib/netlist/analog/nld_mosfet.cpp b/src/lib/netlist/analog/nld_mosfet.cpp
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-// license:GPL-2.0+
-// copyright-holders:Couriersud
-/*
- * nld_mosfet.cpp
- *
- * Formulas in here based on the following Sources:
- *
- * https://www.imperial.ac.uk/pls/portallive/docs/1/7292573.PDF
- * http://www3.imperial.ac.uk/pls/portallive/docs/1/56133736.PDF
- * https://people.rit.edu/lffeee/SPICE_MOSFET_Model_Intro.pdf
- * https://people.rit.edu/lffeee/SPICE.pdf
- * http://web.mit.edu/course/6/6.012/SPR98/www/lectures/S98_Lecture10.pdf
- * http://homepages.rpi.edu/~sawyes/Models_review.pdf
- * http://jaco.ec.t.kanazawa-u.ac.jp/edu/mix/pdf/3.pdf
- *
- * Farid N. Naim, Circuit Simulation (Wiley-IEEE Press, 2010).
- * Stefan Jahn, Michael Margraf, Vincent Habchi and Raimund Jacob, "Qucs Technical Papers" (2007)
- *
- */
-
-#include "netlist/solver/nld_solver.h"
-#include "netlist/nl_setup.h"
-#include "nlid_twoterm.h"
-
-#include <cmath>
-
-#define BODY_CONNECTED_TO_SOURCE (1)
-
-namespace netlist
-{
-namespace analog
-{
-
- using constants = plib::constants<nl_double>;
-
- // -----------------------------------------------------------------------------
- // nld_FET - Base classes
- // -----------------------------------------------------------------------------
-
- /*! Class representing the nmos model paramers.
- *
- * This is the model representation of the nmos model. Typically, SPICE uses
- * the following parameters. A "Y" in the first column indicates that the
- * parameter is actually used in netlist.
- *
- * | NL? |Name | Description|Units |Default |Example |
- * |:---:|------|-----------------------------------------------------------------------|-------|---------:|----------------:|
- * | Y |Vto | Zero-bias threshold voltage | V | 0 | 1 |
- * | Y |Kp | Transconductance parameter | A/V² | 0.00002 | 0.00003 |
- * | Y |Gamma | Bulk threshold parameter | V^½ | 0 | 0.37 |
- * | Y |Phi | Surface inversion potential | V | 0.6 | 0.65 |
- * | Y |Lambda| Channel-length modulation (level 1 and 2 only) | 1/V | 0 | 0.02 |
- * | |Rd | Drain ohmic resistance |W|0|1|
- * | |Rs | Source ohmic resistance |W|0|1|
- * | |Cbd | Zero-bias B-D junction capacitance |F|0|20f|
- * | |Cbs | Zero-bias B-S junction capacitance |F|0|20f|
- * | Y |Is | Bulk junction saturation current |A|0.00000000000001|1E-015|
- * | Y |N | Bulk diode emission coefficient |-|1|*
- * | |Pb | Bulk junction potential |V|0.8|0.87|8|
- * | |Cgso | Gate-source overlap capacitance per meter channel width |F/m|0|0.00000000004|
- * | |Cgdo | Gate-drain overlap capacitance per meter channel width |F/m|0|0.00000000004|*
- * | |Cgbo | Gate-bulk overlap capacitance per meter channel width |F/m|0|0.0000000002|*
- * | |Rsh | Drain and source diffusion sheet resistance |W|0|10|*
- * | |Cj | Zero-bias bulk junction bottom capacitance per square meter of junction area|F/m²|0|0.0002|*
- * | |Mj | Bulk junction bottom grading coefficient |-|0.5|0.5|*
- * | |Cjsw | Zero-bias bulk junction sidewall capacitance per meter of junction perimeter|F/m|0|1p|*
- * | |Mjsw | Bulk junction sidewall grading coefficient |-|.50 level 1 .33 level 2,3||
- * | |Js | Bulk junction saturation current per square-meter of junction area|A/m|0|0.00000001|
- * | Y |Tox | Oxide thickness |m|0.0000001|0.0000001|
- * | Y |Nsub | Substrate doping |1/cm³|0|4000000000000000|
- * | |Nss | Surface state density |1/cm²|0|10000000000|
- * | |Nfs | Fast surface state |1/cm²|0|10000000000|*
- * | |TPG | Type of gate material: +1 opp. to substrate -1 same as substrate 0 Al gate|-|1|
- * | |Xj | Metallurgical junction depth |m|0|1µ|*
- * | Y |Ld | Lateral diffusion |m|0|0.8µ|
- * | Y |Uo | Surface mobility |cm²/V/s|600|700|
- * | |Ucrit | Critical field for mobility degradation (level 2 only) |V/cm|10000|10000|
- * | |Uexp | Critical field exponent in mobility degradation (level 2 only) |-|0|0.1|
- * | |Utra | Transverse field coefficient (level 2 only) |-|0|0.3|*
- * | |Vmax | Maximum carrier drift velocity (levels 2 & 3 only) |m/s|0|50000|
- * | |Neff | Total channel-charge exponent (level 2 only) |-|1|5|
- * | |Kf | Flicker noise coefficient |-|0|1E-026|
- * | |Af | Flicker noise exponent |-|1|1.2|
- * | |Fc | Coefficient for forward-bias depletion capacitance formula |-|0.5|
- * | |Delta | Width effect on threshold voltage(levels 2 and 3) |-|0|1|
- * | |Theta | Mobility modulation (level 3 only) |-|0|0.1|
- * | |Eta | Static feedback (level 3 only) |-|0|1|
- * | |Kappa | Saturation field (level 3 only) |0.2|0.5|
- * | |Tnom | Parameter measurement temperature |ºC|27|50||
- * | Y |L | Length scaling |-|1.0||
- * | Y |W | Width scaling |-|1.0||
- * */
-
- class fet_model_t : public param_model_t
- {
- public:
- fet_model_t(device_t &device, const pstring &name, const pstring &val)
- : param_model_t(device, name, val)
- , m_VTO(*this, "VTO")
- , m_N(*this, "N")
- , m_ISS(*this, "IS") // Haven't seen a model using ISS / ISD
- , m_ISD(*this, "IS")
- , m_LD(*this, "LD")
- , m_L(*this, "L")
- , m_W(*this, "W")
- , m_TOX(*this, "TOX")
- , m_KP(*this, "KP")
- , m_UO(*this, "UO")
- , m_PHI(*this, "PHI")
- , m_NSUB(*this, "NSUB")
- , m_GAMMA(*this, "GAMMA")
- , m_LAMBDA(*this, "LAMBDA")
- , m_RD(*this, "RD")
- , m_RS(*this, "RS")
- {}
-
- value_t m_VTO; //!< Threshold voltage [V]
- value_t m_N; //!< Bulk diode emission coefficient
- value_t m_ISS; //!< Body diode saturation current
- value_t m_ISD; //!< Body diode saturation current
- value_t m_LD; //!< Lateral diffusion [m]
- value_t m_L; //!< Length scaling
- value_t m_W; //!< Width scaling
- value_t m_TOX; //!< Oxide thickness
- value_t m_KP; //!< Transconductance parameter [A/V²]
- value_t m_UO; //!< Surface mobility [cm²/V/s]
- value_t m_PHI; //!< Surface inversion potential [V]
- value_t m_NSUB;//!< Substrate doping [1/cm³]
- value_t m_GAMMA; //!< Bulk threshold parameter [V^½]
- value_t m_LAMBDA; //!< Channel-length modulation [1/V]
- value_t m_RD; //!< Drain ohmic resistance
- value_t m_RS; //!< Source ohmic resistance
- };
-
- // Have a common start for mosfets
-
- NETLIB_OBJECT(FET)
- {
- public:
- enum q_type {
- FET_NMOS,
- FET_PMOS
- };
-
- NETLIB_CONSTRUCTOR(FET)
- , m_model(*this, "MODEL", "NMOS")
- , m_qtype(FET_NMOS)
- {
- }
-
- NETLIB_IS_DYNAMIC(true)
-
- //NETLIB_RESETI();
- NETLIB_UPDATEI() { }
-
- q_type qtype() const { return m_qtype; }
- bool is_qtype(q_type atype) const { return m_qtype == atype; }
- void set_qtype(q_type atype) { m_qtype = atype; }
- protected:
-
- fet_model_t m_model;
- private:
- q_type m_qtype;
- };
-
- // -----------------------------------------------------------------------------
- // nld_QBJT_EB
- // -----------------------------------------------------------------------------
-
-
- NETLIB_OBJECT_DERIVED(MOSFET, FET)
- {
- public:
- NETLIB_CONSTRUCTOR_DERIVED(MOSFET, FET)
- , m_DG(*this, "m_DG", true)
- , m_SG(*this, "m_SG", true)
- , m_SD(*this, "m_SD", true)
- , m_D_BD(*this, "m_D_BD")
-#if (!BODY_CONNECTED_TO_SOURCE)
- , m_D_BS(*this, "m_D_BS")
-#endif
- , m_phi(0.0)
- , m_gamma(0.0)
- , m_vto(0.0)
- , m_beta(0.0)
- , m_lambda(0.0)
- , m_Leff(0.0)
- , m_Cox(0.0)
- {
- register_subalias("S", m_SG.m_P); // Source
- register_subalias("G", m_SG.m_N); // Gate
-
- register_subalias("D", m_DG.m_P); // Drain
-
- connect(m_SG.m_P, m_SD.m_P);
- connect(m_SG.m_N, m_DG.m_N);
- connect(m_DG.m_P, m_SD.m_N);
-
-#if 0
- if (m_model.m_CJE > 0.0)
- {
- create_and_register_subdevice("m_CJE", m_CJE);
- connect("B", "m_CJE.1");
- connect("E", "m_CJE.2");
- }
- if (m_model.m_CJC > 0.0)
- {
- create_and_register_subdevice("m_CJC", m_CJC);
- connect("B", "m_CJC.1");
- connect("C", "m_CJC.2");
- }
-#endif
- }
-
- protected:
-
- NETLIB_RESETI();
- NETLIB_UPDATEI();
- NETLIB_UPDATE_PARAMI();
- NETLIB_UPDATE_TERMINALSI();
-
- private:
-
- nld_twoterm m_DG;
- nld_twoterm m_SG;
- nld_twoterm m_SD;
-
- generic_diode<diode_e::MOS> m_D_BD;
-#if (!BODY_CONNECTED_TO_SOURCE)
- generic_diode<diode_e::MOS> m_D_BS;
-#endif
-
- nl_double m_phi;
- nl_double m_gamma;
- nl_double m_vto;
- nl_double m_beta;
- nl_double m_lambda;
-
- /* used in capacitance calculation */
- nl_double m_Leff;
- nl_double m_Cox;
-
- //NETLIB_SUBXX(analog, C) m_CJE;
- //NETLIB_SUBXX(analog, C) m_CJC;
- };
-
-
-
- // ----------------------------------------------------------------------------------------
- // nld_Q - Ebers Moll
- // ----------------------------------------------------------------------------------------
-
-
- NETLIB_UPDATE(MOSFET)
- {
- if (!m_SG.m_P.net().isRailNet())
- m_SG.m_P.solve_now(); // Basis
- else if (!m_SG.m_N.net().isRailNet())
- m_SG.m_N.solve_now(); // Emitter
- else
- m_DG.m_N.solve_now(); // Collector
- }
-
- NETLIB_RESET(MOSFET)
- {
- NETLIB_NAME(FET)::reset();
-#if 0
- if (m_CJE)
- {
- m_CJE->reset();
- m_CJE->m_C.setTo(m_model.m_CJE);
- }
- if (m_CJC)
- {
- m_CJC->reset();
- m_CJC->m_C.setTo(m_model.m_CJC);
- }
-#endif
- }
-
- NETLIB_UPDATE_TERMINALS(MOSFET)
- {
- const nl_double polarity = (qtype() == FET_NMOS ? 1.0 : -1.0);
-
- const nl_double Ugd = -m_DG.deltaV() * polarity; // Gate - Drain
- const nl_double Ugs = -m_SG.deltaV() * polarity; // Gate - Source
- const nl_double Ubs = 0.0; // Bulk - Source == 0 if connected
- const nl_double Ubd = m_SD.deltaV() * polarity; // Bulk - Drain = Source - Drain
- const nl_double Uds = Ugs - Ugd;
-
-#if (!BODY_CONNECTED_TO_SOURCE)
- m_D_BS.update_diode(Ubs);
-#endif
- m_D_BD.update_diode(Ubd);
-
- // Are we in forward mode ?
- const bool is_forward = Uds >= 0;
-
- // calculate Vth
- const nl_double Vbulk = is_forward ? Ubs : Ubd;
- const nl_double phi_m_Vbulk = (m_phi > Vbulk) ? std::sqrt(m_phi - Vbulk) : 0.0;
- const nl_double Vth = m_vto * polarity + m_gamma * (phi_m_Vbulk - std::sqrt(m_phi));
-
- const nl_double Vctrl = (is_forward ? Ugs : Ugd) - Vth;
-
- nl_double Ids, gm, gds, gmb;
-
- if (Vctrl <= 0.0)
- {
- // cutoff region
- Ids = 0.0;
- gm = 0.0;
- gds = 0.0;
- gmb = 0.0;
- }
- else
- {
- const nl_double Vds = std::abs(Uds);
- const nl_double b = m_beta * (1.0 + m_lambda * Vds);
- if (Vctrl <= Vds)
- {
- // saturation region
- Ids = b * Vctrl * Vctrl / 2.0;
- gm = b * Vctrl;
- gds = m_lambda * m_beta * Vctrl * Vctrl / 2.0;
- }
- else
- {
- // linear region
- Ids = b * Vds * (Vctrl - Vds / 2);
- gm = b * Vds;
- gds = b * (Vctrl - Vds) + m_lambda * m_beta * Vds * (Vctrl - Vds / 2.0);
- }
-
- // backgate transconductance
- const nl_double bgtc = (phi_m_Vbulk != 0.0) ? (m_gamma / phi_m_Vbulk / 2.0) : 0.0;
- gmb = gm * bgtc;
- }
-
- // FIXME: these are needed to compute capacitance
- // nl_double Udsat = pol * std::max (Utst, 0.0);
- // Uon = pol * Vth;
-
- // compute bulk diode equivalent currents
-
- const nl_double IeqBD = m_D_BD.Ieq();
- const nl_double gbd = m_D_BD.G();
-#if 0
- const nl_double IeqBS = m_D_BS.Ieq();
- const nl_double gbs = m_D_BS.G();
-#else
- const nl_double IeqBS = 0.0;
- const nl_double gbs = 0.0;
-#endif
- // exchange controlling nodes if necessary
- const nl_double gsource = is_forward ? (gm + gmb) : 0;
- const nl_double gdrain = is_forward ? 0.0 : (gm + gmb);
-
- const nl_double IeqDS = (is_forward) ?
- Ids - gm * Ugs - gmb * Ubs - gds * Uds
- : -Ids - gm * Ugd - gmb * Ubd - gds * Uds;
-
- // IG = 0
- const nl_double IG = 0.0;
- const nl_double ID = (+IeqBD - IeqDS) * polarity;
- const nl_double IS = (+IeqBS + IeqDS) * polarity;
- const nl_double IB = (-IeqBD - IeqBS) * polarity;
-
- const nl_double gGG = 0.0; // ok
- const nl_double gGD = 0.0; // ok
- const nl_double gGS = 0.0; // ok
- const nl_double gGB = 0.0; // ok
-
- const nl_double gDG = gm; // ok
- const nl_double gDD = gds + gbd - gdrain; // ok
- const nl_double gDS = -gds - gsource; // ok
- const nl_double gDB = gmb - gbd; // ok
-
- const nl_double gSG = -gm; // ok
- const nl_double gSD = -gds + gdrain; // ok
- const nl_double gSS = gbs + gds + gsource; // ok
- const nl_double gSB = -gbs - gmb;
-
- const nl_double gBG = 0.0; // ok
- const nl_double gBD = -gbd; // ok
- const nl_double gBS = -gbs;
- const nl_double gBB = gbs + gbd; // ok
-
- // Source connected to body, Diode S-B shorted!
- const nl_double gSSBB = gSS + gBB + gBS + gSB;
-
- // S G
- m_SG.set_mat( gSSBB, gSG + gBG, +(IS + IB), // S
- gGS + gGB, gGG, IG ); // G
- // D G
- m_DG.set_mat( gDD, gDG, +ID, // D
- gGD, 0.0, 0.0 ); // G
- // S D
- m_SD.set_mat( 0.0, gSD + gBD, 0.0, // S
- gDS + gDB, 0.0, 0.0); // D
-
- }
-
-
- NETLIB_UPDATE_PARAM(MOSFET)
- {
- set_qtype((m_model.model_type() == "NMOS") ? FET_NMOS : FET_PMOS);
-
- /*
- * From http://ltwiki.org/LTspiceHelp/LTspiceHelp/M_MOSFET.htm :
- *
- * VTO, KP, LAMBDA, PHI and GAMMA. These parameters are computed
- * if the process parameters(NSUB, TOX,...) are given, but
- * user-specified values always override.
- *
- * But couldn't find a formula for lambda anywhere
- *
- */
-
- m_lambda = m_model.m_LAMBDA; // FIXME: m_lambda only set once
-
- // calculate effective channel length
- m_Leff = m_model.m_L - 2 * m_model.m_LD;
- nl_assert_always(m_Leff > 0.0, "Effective Lateral diffusion would be negative for model " + m_model.name());
- if (m_model.m_TOX > 0.0)
- m_Cox = (constants::eps_SiO2() * constants::eps_0() / m_model.m_TOX);
- else
- m_Cox = 0.0;
-
- // calculate DC transconductance coefficient
- if (m_model.m_KP > 0)
- m_beta = m_model.m_KP * m_model.m_W / m_Leff;
- else if (m_Cox > 0 && m_model.m_UO > 0)
- m_beta = m_model.m_UO * 1e-4 * m_Cox * m_model.m_W / m_Leff;
- else
- m_beta = 2e-5 * m_model.m_W / m_Leff;
-
- // Bulk diodes
-
- m_D_BD.set_param(m_model.m_ISD, m_model.m_N, exec().gmin(), constants::T0());
-#if (!BODY_CONNECTED_TO_SOURCE)
- m_D_BS.set_param(m_model.m_ISS, m_model.m_N, exec().gmin(), constants::T0());
-#endif
-
- //FIXME::UT can disappear
- const double Vt = constants::T0() * constants::k_b() / constants::Q_e();
-
- // calculate surface potential if not given
-
- if (m_model.m_PHI > 0.0)
- m_phi = m_model.m_PHI;
- else if (m_model.m_NSUB > 0.0)
- {
- nl_assert_always(m_model.m_NSUB * 1e6 >= constants::NiSi(), "Error calculating phi for model " + m_model.name());
- m_phi = 2 * Vt * std::log (m_model.m_NSUB * 1e6 / constants::NiSi());
- }
- else
- m_phi = 0.6;
-
- // calculate bulk threshold if not given
- if (m_model.m_GAMMA > 0.0)
- m_gamma = m_model.m_GAMMA;
- else
- {
- if (m_Cox > 0 && m_model.m_NSUB > 0)
- m_gamma = std::sqrt (2.0 * constants::Q_e() * constants::eps_Si() * constants::eps_0() * m_model.m_NSUB * 1e6) / m_Cox;
- else
- m_gamma = 0.0;
- }
-
- m_vto = m_model.m_VTO;
- nl_assert_always(m_vto != 0.0, "Threshold voltage not specified for " + m_model.name());
-
- /* FIXME: VTO if missing may be calculated from TPG, NSS and temperature. Usually models
- * specify VTO so skip this here.
- */
-
- m_Cox = m_Cox * m_model.m_W * m_Leff;
-
- }
-
-} // namespace analog
-
-namespace devices {
- NETLIB_DEVICE_IMPL_NS(analog, MOSFET, "MOSFET", "MODEL")
-} // namespace devices
-
-} // namespace netlist