diff options
Diffstat (limited to 'src/lib/netlist/analog/nld_mosfet.cpp')
-rw-r--r-- | src/lib/netlist/analog/nld_mosfet.cpp | 30 |
1 files changed, 15 insertions, 15 deletions
diff --git a/src/lib/netlist/analog/nld_mosfet.cpp b/src/lib/netlist/analog/nld_mosfet.cpp index bb3116a6960..78f4b4df615 100644 --- a/src/lib/netlist/analog/nld_mosfet.cpp +++ b/src/lib/netlist/analog/nld_mosfet.cpp @@ -59,38 +59,38 @@ namespace analog * | |Cbd | Zero-bias B-D junction capacitance |F|0|20f| * | |Cbs | Zero-bias B-S junction capacitance |F|0|20f| * | Y |Is | Bulk junction saturation current |A|0.00000000000001|1E-015| - * | Y |N | Bulk diode emission coefficient |-|1|* - * | |Pb | Bulk junction potential |V|0.8|0.87|8| + * | Y |N | Bulk diode emission coefficient |-|1|*| + * | |Pb | Bulk junction potential |V|0.8|0.87| * | Y |Cgso | Gate-source overlap capacitance per meter channel width |F/m|0|0.00000000004| - * | Y |Cgdo | Gate-drain overlap capacitance per meter channel width |F/m|0|0.00000000004|* - * | Y |Cgbo | Gate-bulk overlap capacitance per meter channel width |F/m|0|0.0000000002|* - * | |Rsh | Drain and source diffusion sheet resistance |W|0|10|* - * | |Cj | Zero-bias bulk junction bottom capacitance per square meter of junction area|F/m²|0|0.0002|* - * | |Mj | Bulk junction bottom grading coefficient |-|0.5|0.5|* - * | |Cjsw | Zero-bias bulk junction sidewall capacitance per meter of junction perimeter|F/m|0|1p|* + * | Y |Cgdo | Gate-drain overlap capacitance per meter channel width |F/m|0|0.00000000004*| + * | Y |Cgbo | Gate-bulk overlap capacitance per meter channel width |F/m|0|0.0000000002*| + * | |Rsh | Drain and source diffusion sheet resistance |W|0|10*| + * | |Cj | Zero-bias bulk junction bottom capacitance per square meter of junction area|F/m²|0|0.0002*| + * | |Mj | Bulk junction bottom grading coefficient |-|0.5|0.5*| + * | |Cjsw | Zero-bias bulk junction sidewall capacitance per meter of junction perimeter|F/m|0|1p*| * | |Mjsw | Bulk junction sidewall grading coefficient |-|.50 level 1 .33 level 2,3|| * | |Js | Bulk junction saturation current per square-meter of junction area|A/m|0|0.00000001| * | Y |Tox | Oxide thickness |m|0.0000001|0.0000001| * | Y |Nsub | Substrate doping |1/cm³|0|4000000000000000| * | |Nss | Surface state density |1/cm²|0|10000000000| - * | |Nfs | Fast surface state |1/cm²|0|10000000000|* - * | |TPG | Type of gate material: +1 opp. to substrate -1 same as substrate 0 Al gate|-|1| - * | |Xj | Metallurgical junction depth |m|0|1µ|* + * | |Nfs | Fast surface state |1/cm²|0|10000000000*| + * | |TPG | Type of gate material: +1 opp. to substrate -1 same as substrate |Al gate|-|1| + * | |Xj | Metallurgical junction depth |m|0|1µ*| * | Y |Ld | Lateral diffusion |m|0|0.8µ| * | Y |Uo | Surface mobility |cm²/V/s|600|700| * | |Ucrit | Critical field for mobility degradation (level 2 only) |V/cm|10000|10000| * | |Uexp | Critical field exponent in mobility degradation (level 2 only) |-|0|0.1| - * | |Utra | Transverse field coefficient (level 2 only) |-|0|0.3|* + * | |Utra | Transverse field coefficient (level 2 only) |-|0|0.3*| * | |Vmax | Maximum carrier drift velocity (levels 2 & 3 only) |m/s|0|50000| * | |Neff | Total channel-charge exponent (level 2 only) |-|1|5| * | |Kf | Flicker noise coefficient |-|0|1E-026| * | |Af | Flicker noise exponent |-|1|1.2| - * | |Fc | Coefficient for forward-bias depletion capacitance formula |-|0.5| + * | |Fc | Coefficient for forward-bias depletion capacitance formula |-|0.5|| * | |Delta | Width effect on threshold voltage(levels 2 and 3) |-|0|1| * | |Theta | Mobility modulation (level 3 only) |-|0|0.1| * | |Eta | Static feedback (level 3 only) |-|0|1| - * | |Kappa | Saturation field (level 3 only) |0.2|0.5| - * | |Tnom | Parameter measurement temperature |ºC|27|50|| + * | |Kappa | Saturation field (level 3 only) |-|0.2|0.5| + * | |Tnom | Parameter measurement temperature |ºC|27|50| * | Y |L | Length scaling |-|100e-6|| * | Y |W | Width scaling |-|100e-6|| * */ |