diff options
Diffstat (limited to 'src/lib/netlist/analog/nld_bjt.cpp')
-rw-r--r-- | src/lib/netlist/analog/nld_bjt.cpp | 90 |
1 files changed, 44 insertions, 46 deletions
diff --git a/src/lib/netlist/analog/nld_bjt.cpp b/src/lib/netlist/analog/nld_bjt.cpp index 4ce91ba72b3..e40fbfa366d 100644 --- a/src/lib/netlist/analog/nld_bjt.cpp +++ b/src/lib/netlist/analog/nld_bjt.cpp @@ -47,57 +47,55 @@ private: // nld_Q - Base classes // ----------------------------------------------------------------------------- - /* FIXME: Make table pretty */ - /*! Class representing the bjt model paramers. + * * This is the model representation of the bjt model. Typically, SPICE uses * the following parameters. A "Y" in the first column indicates that the * parameter is actually used in netlist. * - * |NL? |name |parameter |units|default| example|area | - * |:--:|:-----|:--------------------------------|:----|------:|-------:|:----:| - * | Y |IS |transport saturation current|A |1E-016|1E-015|* | - * | Y |BF |ideal maximum forward beta|- |100|100| | - * | Y |NF |forward current emission coefficient|- |1|1| | - * | |VAF |forward Early voltage|V |infinite |200| | - * | |IKF |corner for forward beta high current roll-off|A |infinite |0.01|* | - * | |ISE |B-E leakage saturation current|A |0|0.0000000000001|* | - * | |NE |B-E leakage emission coefficient|- |1.5|2| | - * | Y |BR |ideal maximum reverse beta |- |1|0.1| | - * | Y |NR |reverse current emission coefficient|- |1|1| | - * | |VAR |reverse Early voltage|V |infinite |200| | - * | |IKR |corner for reverse beta high current roll-off|A |infinite |0.01|* | - * | |ISC |leakage saturation current|A |0|8| | - * | |NC |leakage emission coefficient|- |2|1.5| | - * | |RB |zero bias base resistance| |0|100|* | - * | |IRB |current where base resistance falls halfway to its min value|A |infinte |0.1|* | - * | |RBM |minimum base resistance at high currents| |RB |10|* | - * | |RE |emitter resistance| |0|1|* | - * | |RC |collector resistance | |0|10|* | - * | |CJE |B-E zero-bias depletion capacitance|F |0|2pF |* | - * | |VJE |B-E built-in potential|V |0.75|0.6| | - * | |MJE |B-E junction exponential factor |- |0.33|0.33| | - * | |TF |ideal forward transit time |sec |0|0.1ns | | - * | |XTF|coefficient for bias dependence of TF |- |0| | | - * | |VTF |voltage describing VBC dependence of TF |V |infinite | | | - * | |ITF |high-current parameter for effect on TF |A |0| |* | - * | |PTF |excess phase at freq=1.0/(TF*2PI) Hz |deg |0| | | - * | |CJC |B-C zero-bias depletion capacitance |F |0|2pF |* | - * | |VJC |B-C built-in potential |V |0.75|0.5| | - * | |MJC |B-C junction exponential factor |- |0.33|0.5| | - * | |XCJC |fraction of B-C depletion capacitance connected to internal base node |- |1| | | - * | |TR |ideal reverse transit time |sec |0|10ns | | - * | |CJS |zero-bias collector-substrate capacitance |F |0|2pF |* | - * | |VJS |substrate junction built-in potential |V |0.75| | | - * | |MJS |substrate junction exponential factor |- |0|0.5| | - * | |XTB |forward and reverse beta temperature exponent |- |0| | | - * | |EG|energy gap for temperature effect on IS |eV |1.11| | | - * | |XTI|temperature exponent for effect on IS |- |3| | | - * | |KF |flicker-noise coefficient |- |0| | | - * | |AF |flicker-noise exponent |- |1| | | - * | |FC |coefficient for forward-bias depletion capacitance formula |- |0.5| | | - * | |TNOM |Parameter measurement temperature |C |27|50| | - */ + * | NL? | name | parameter | units | default | example | area | + * |:---:|------|-----------------------------------------------------------------------|-------|---------:|----------------:|:----:| + * | Y | IS | transport saturation current | A | 1E-016 | 1E-015 | * | + * | Y | BF | ideal maximum forward beta | - | 100 | 100 | | + * | Y | NF | forward current emission coefficient | - | 1 | 1 | | + * | | VAF | forward Early voltage | V | infinite | 200 | | + * | | IKF | corner for forward beta high current roll-off | A | infinite | 0.01 | * | + * | | ISE | B-E leakage saturation current | A | 0 | 0.0000000000001 | * | + * | | NE | B-E leakage emission coefficient | - | 1.5 | 2 | | + * | Y | BR | ideal maximum reverse beta | - | 1 | 0.1 | | + * | Y | NR | reverse current emission coefficient | - | 1 | 1 | | + * | | VAR | reverse Early voltage | V | infinite | 200 | | + * | | IKR | corner for reverse beta high current roll-off | A | infinite | 0.01 | * | + * | | ISC | leakage saturation current | A | 0 | 8 | | + * | | NC | leakage emission coefficient | - | 2 | 1.5 | | + * | | RB | zero bias base resistance | | 0 | 100 | * | + * | | IRB | current where base resistance falls halfway to its min value | A | infinte | 0.1 | * | + * | | RBM | minimum base resistance at high currents | | RB | 10 | * | + * | | RE | emitter resistance | | 0 | 1 | * | + * | | RC | collector resistance | | 0 | 10 | * | + * | | CJE | B-E zero-bias depletion capacitance | F | 0 | 2pF | * | + * | | VJE | B-E built-in potential | V | 0.75 | 0.6 | | + * | | MJE | B-E junction exponential factor | - | 0.33 | 0.33 | | + * | | TF | ideal forward transit time | sec | 0 | 0.1ns | | + * | | XTF | coefficient for bias dependence of TF | - | 0 | | | + * | | VTF | voltage describing VBC dependence of TF | V | infinite | | | + * | | ITF | high-current parameter for effect on TF | A | 0 | | * | + * | | PTF | excess phase at freq=1.0/(TF*2PI) Hz | deg | 0 | | | + * | | CJC | B-C zero-bias depletion capacitance | F | 0 | 2pF | * | + * | | VJC | B-C built-in potential | V | 0.75 | 0.5 | | + * | | MJC | B-C junction exponential factor | - | 0.33 | 0.5 | | + * | | XCJC | fraction of B-C depletion capacitance connected to internal base node | - | 1 | | | + * | | TR | ideal reverse transit time | sec | 0 | 10ns | | + * | | CJS | zero-bias collector-substrate capacitance | F | 0 | 2pF | * | + * | | VJS | substrate junction built-in potential | V | 0.75 | | | + * | | MJS | substrate junction exponential factor | - | 0 | 0.5 | | + * | | XTB | forward and reverse beta temperature exponent | - | 0 | | | + * | | EG | energy gap for temperature effect on IS | eV | 1.11 | | | + * | | XTI | temperature exponent for effect on IS | - | 3 | | | + * | | KF | flicker-noise coefficient | - | 0 | | | + * | | AF | flicker-noise exponent | - | 1 | | | + * | | FC | coefficient for forward-bias depletion capacitance formula | - | 0.5 | | | + * | | TNOM | Parameter measurement temperature | C | 27 | 50 | | */ class bjt_model_t : public param_model_t { |