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Diffstat (limited to 'src/lib/netlist/analog/nld_mosfet.cpp')
-rw-r--r--src/lib/netlist/analog/nld_mosfet.cpp30
1 files changed, 15 insertions, 15 deletions
diff --git a/src/lib/netlist/analog/nld_mosfet.cpp b/src/lib/netlist/analog/nld_mosfet.cpp
index bb3116a6960..78f4b4df615 100644
--- a/src/lib/netlist/analog/nld_mosfet.cpp
+++ b/src/lib/netlist/analog/nld_mosfet.cpp
@@ -59,38 +59,38 @@ namespace analog
* | |Cbd | Zero-bias B-D junction capacitance |F|0|20f|
* | |Cbs | Zero-bias B-S junction capacitance |F|0|20f|
* | Y |Is | Bulk junction saturation current |A|0.00000000000001|1E-015|
- * | Y |N | Bulk diode emission coefficient |-|1|*
- * | |Pb | Bulk junction potential |V|0.8|0.87|8|
+ * | Y |N | Bulk diode emission coefficient |-|1|*|
+ * | |Pb | Bulk junction potential |V|0.8|0.87|
* | Y |Cgso | Gate-source overlap capacitance per meter channel width |F/m|0|0.00000000004|
- * | Y |Cgdo | Gate-drain overlap capacitance per meter channel width |F/m|0|0.00000000004|*
- * | Y |Cgbo | Gate-bulk overlap capacitance per meter channel width |F/m|0|0.0000000002|*
- * | |Rsh | Drain and source diffusion sheet resistance |W|0|10|*
- * | |Cj | Zero-bias bulk junction bottom capacitance per square meter of junction area|F/m²|0|0.0002|*
- * | |Mj | Bulk junction bottom grading coefficient |-|0.5|0.5|*
- * | |Cjsw | Zero-bias bulk junction sidewall capacitance per meter of junction perimeter|F/m|0|1p|*
+ * | Y |Cgdo | Gate-drain overlap capacitance per meter channel width |F/m|0|0.00000000004*|
+ * | Y |Cgbo | Gate-bulk overlap capacitance per meter channel width |F/m|0|0.0000000002*|
+ * | |Rsh | Drain and source diffusion sheet resistance |W|0|10*|
+ * | |Cj | Zero-bias bulk junction bottom capacitance per square meter of junction area|F/m²|0|0.0002*|
+ * | |Mj | Bulk junction bottom grading coefficient |-|0.5|0.5*|
+ * | |Cjsw | Zero-bias bulk junction sidewall capacitance per meter of junction perimeter|F/m|0|1p*|
* | |Mjsw | Bulk junction sidewall grading coefficient |-|.50 level 1 .33 level 2,3||
* | |Js | Bulk junction saturation current per square-meter of junction area|A/m|0|0.00000001|
* | Y |Tox | Oxide thickness |m|0.0000001|0.0000001|
* | Y |Nsub | Substrate doping |1/cm³|0|4000000000000000|
* | |Nss | Surface state density |1/cm²|0|10000000000|
- * | |Nfs | Fast surface state |1/cm²|0|10000000000|*
- * | |TPG | Type of gate material: +1 opp. to substrate -1 same as substrate 0 Al gate|-|1|
- * | |Xj | Metallurgical junction depth |m|0|1µ|*
+ * | |Nfs | Fast surface state |1/cm²|0|10000000000*|
+ * | |TPG | Type of gate material: +1 opp. to substrate -1 same as substrate |Al gate|-|1|
+ * | |Xj | Metallurgical junction depth |m|0|1µ*|
* | Y |Ld | Lateral diffusion |m|0|0.8µ|
* | Y |Uo | Surface mobility |cm²/V/s|600|700|
* | |Ucrit | Critical field for mobility degradation (level 2 only) |V/cm|10000|10000|
* | |Uexp | Critical field exponent in mobility degradation (level 2 only) |-|0|0.1|
- * | |Utra | Transverse field coefficient (level 2 only) |-|0|0.3|*
+ * | |Utra | Transverse field coefficient (level 2 only) |-|0|0.3*|
* | |Vmax | Maximum carrier drift velocity (levels 2 & 3 only) |m/s|0|50000|
* | |Neff | Total channel-charge exponent (level 2 only) |-|1|5|
* | |Kf | Flicker noise coefficient |-|0|1E-026|
* | |Af | Flicker noise exponent |-|1|1.2|
- * | |Fc | Coefficient for forward-bias depletion capacitance formula |-|0.5|
+ * | |Fc | Coefficient for forward-bias depletion capacitance formula |-|0.5||
* | |Delta | Width effect on threshold voltage(levels 2 and 3) |-|0|1|
* | |Theta | Mobility modulation (level 3 only) |-|0|0.1|
* | |Eta | Static feedback (level 3 only) |-|0|1|
- * | |Kappa | Saturation field (level 3 only) |0.2|0.5|
- * | |Tnom | Parameter measurement temperature |ºC|27|50||
+ * | |Kappa | Saturation field (level 3 only) |-|0.2|0.5|
+ * | |Tnom | Parameter measurement temperature |ºC|27|50|
* | Y |L | Length scaling |-|100e-6||
* | Y |W | Width scaling |-|100e-6||
* */